Radiation Dosimetry

In general, there are two types of dopant atoms resulting in two types of extrinsic semiconductors. These dopants that produce the desired controlled changes are classified as either electron acceptors or donors and the corresponding doped semiconductors are known as:

• n-type Semiconductors.
• p-type Semiconductors.

Extrinsic semiconductors are components of many common electrical devices, as well of many detectors of ionizing radiation. For these purpose, a semiconductor diode (devices that allow current in only one direction) usually consists of p-type and n-type semiconductors placed in junction with one another.

n-type Semiconductors

An extrinsic semiconductor which has been doped with electron donor atoms is called an n-type semiconductor, because the majority of charge carriers in the crystal are negative electrons. Since silicon is a tetravalent element, the normal crystal structure contains 4 covalent bonds from four valence electrons. In silicon, the most common dopants are group III and group V elements. Group V elements (pentavalent) have five valence electrons, which allows them to act as a donor. That means, the addition of these pentavalent impurities such as arsenic, antimony or phosphorus contributes free electrons, greatly increasing the conductivity of the intrinsic semiconductor. For example, a silicon crystal doped with boron (group III) creates a p-type semiconductor whereas a crystal doped with phosphorus (group V) results in an n-type semiconductor.

The conduction electrons are completely dominated by the number of donor electrons. Therefore:

The total number of conduction electrons is approximately equal to the number of donor sites, n≈N_D.

Charge neutrality of semiconductor material is maintained because excited donor sites balance the conduction electrons. The net result is that the number of conduction electrons is increased, while the number of holes is reduced. The imbalance of the carrier concentration in the respective bands is expressed by the different absolute number of electrons and holes. Electrons are majority carriers, while holes are minority carriers in n-type material.

p-type Semiconductors

An extrinsic semiconductor which has been doped with electron acceptor atoms is called a p-type semiconductor, because the majority of charge carriers in the crystal are electron holes (positive charge carriers). The pure semiconductor silicon is a tetravalent element, the normal crystal structure contains 4 covalent bonds from four valence electrons. In silicon, the most common dopants are group III and group V elements. Group III elements (trivalent) all contain three valence electrons, causing them to function as acceptors when used to dope silicon. When an acceptor atom replaces a tetravalent silicon atom in the crystal, a vacant state (an electron hole) is created. An electron hole (often simply called a hole) is the lack of an electron at a position where one could exist in an atom or atomic lattice. It is one of the two types of charge carriers that are responsible for creating electric current in semiconducting materials. These positively charged holes can move from atom to atom in semiconducting materials as electrons leave their positions. The addition of trivalent impurities such as boron, aluminum or gallium to an intrinsic semiconductor creates these positive electron holes in the structure.  For example, a silicon crystal doped with boron (group III) creates a p-type semiconductor whereas a crystal doped with phosphorus (group V) results in an n-type semiconductor.

The number of electron holes are completely dominated by the number of acceptor sites. Therefore:

The total number of holes is approximately equal to the number of donor sites, p ≈ N_A.

Charge neutrality of this semiconductor material is also maintained. The net result is that the number of electron holes is increased, while the number of conduction electrons is reduced. The imbalance of the carrier concentration in the respective bands is expressed by the different absolute number of electrons and holes. Electron holes are majority carriers, while electrons are minority carriers in p-type material.

See also:

Types of Semiconductors

n-type Semiconductors

An extrinsic semiconductor which has been doped with electron donor atoms is called an n-type semiconductor, because the majority of charge carriers in the crystal are negative electrons. Since silicon is a tetravalent element, the normal crystal structure contains 4 covalent bonds from four valence electrons. In silicon, the most common dopants are group III and group V elements. Group V elements (pentavalent) have five valence electrons, which allows them to act as a donor. That means, the addition of these pentavalent impurities such as arsenic, antimony or phosphorus contributes free electrons, greatly increasing the conductivity of the intrinsic semiconductor. For example, a silicon crystal doped with boron (group III) creates a p-type semiconductor whereas a crystal doped with phosphorus (group V) results in an n-type semiconductor.

The conduction electrons are completely dominated by the number of donor electrons. Therefore:

The total number of conduction electrons is approximately equal to the number of donor sites, n≈N_D.

Charge neutrality of semiconductor material is maintained because excited donor sites balance the conduction electrons. The net result is that the number of conduction electrons is increased, while the number of holes is reduced. The imbalance of the carrier concentration in the respective bands is expressed by the different absolute number of electrons and holes. Electrons are majority carriers, while holes are minority carriers in n-type material.

Donor Level

From the energy gap viewpoint, such impurities “create” energy levels in the band gap close to conduction band so that electrons can be easily excited from these levels into the conduction band. The electrons are said to be the “majority carriers” for current flow in an n-type semiconductor. This shifts the effective Fermi level to a point about halfway between the donor levels and the conduction band. Fermi level is the term used to describe the top of the collection of electron energy levels at absolute zero temperature. The Fermi level is the surface of Fermi sea at absolute zero where no electrons will have enough energy to rise above the surface. In pure semiconductors the position of the Fermi level is within the band gap, approximately in the middle of the band gap.

See also:

Types of Semiconductors

p-type Semiconductors

An extrinsic semiconductor which has been doped with electron acceptor atoms is called a p-type semiconductor, because the majority of charge carriers in the crystal are electron holes (positive charge carriers). The pure semiconductor silicon is a tetravalent element, the normal crystal structure contains 4 covalent bonds from four valence electrons. In silicon, the most common dopants are group III and group V elements. Group III elements (trivalent) all contain three valence electrons, causing them to function as acceptors when used to dope silicon. When an acceptor atom replaces a tetravalent silicon atom in the crystal, a vacant state (an electron hole) is created. An electron hole (often simply called a hole) is the lack of an electron at a position where one could exist in an atom or atomic lattice. It is one of the two types of charge carriers that are responsible for creating electric current in semiconducting materials. These positively charged holes can move from atom to atom in semiconducting materials as electrons leave their positions. The addition of trivalent impurities such as boron, aluminum or gallium to an intrinsic semiconductor creates these positive electron holes in the structure.  For example, a silicon crystal doped with boron (group III) creates a p-type semiconductor whereas a crystal doped with phosphorus (group V) results in an n-type semiconductor.

The number of electron holes are completely dominated by the number of acceptor sites. Therefore:

The total number of holes is approximately equal to the number of donor sites, p ≈ N_A.

Charge neutrality of this semiconductor material is also maintained. The net result is that the number of electron holes is increased, while the number of conduction electrons is reduced. The imbalance of the carrier concentration in the respective bands is expressed by the different absolute number of electrons and holes. Electron holes are majority carriers, while electrons are minority carriers in p-type material.

Acceptor Level

From the energy gap viewpoint, such impurities “create” energy levels within the band gap close to the valence band so that electrons can be easily excited from the valence band into these levels, leaving mobile holes in the valence band. They create “shallow” levels, levels that are very close to the valence band, so the energy required to ionize the atom (accept the electron that fills the hole and creates another hole further from the substituted atom) is small. This shifts the effective Fermi level to a point about halfway between the acceptor levels and the valence band. Fermi level is the term used to describe the top of the collection of electron energy levels at absolute zero temperature. The Fermi level is the surface of Fermi sea at absolute zero where no electrons will have enough energy to rise above the surface. In pure semiconductors the position of the Fermi level is within the band gap, approximately in the middle of the band gap.

See also:

Types of Semiconductors

An extrinsic semiconductor, or doped semiconductor, is a semiconductor, that was intentionally doped for the purpose of modulating its electrical, optical and structural properties. In case of semiconductor detectors of ionizing radiation, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of changes in their electrical properties. Therefore, intrinsic semiconductors are also known as pure semiconductors or i-type semiconductors.

The addition of a small percentage of foreign atoms in the regular crystal lattice of silicon or germanium produces dramatic changes in their electrical properties, since these foreign atoms incorporated into the crystal structure of the semiconductor provide free charge carriers (electrons or electron holes) in the semiconductor. In an extrinsic semiconductor it is these foreign dopant atoms in the crystal lattice that mainly provide the charge carriers which carry electric current through the crystal. In general, there are two types of dopant atoms resulting in two types of extrinsic semiconductors. These dopants that produce the desired controlled changes are classified as either electron acceptors or donors and the corresponding doped semiconductors are known as:

• n-type Semiconductors. 
• p-type Semiconductors.

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Charge Carriers in Extrinsic Semiconductors

The number of charge carriers pure semiconductor at certain temperature is determined by the properties of the material itself instead of the amount of impurities. Note that, a 1 cm³ sample of pure germanium at 20 °C contains about 4.2×10²² atoms, but also contains about 2.5 x 10¹³ free electrons and 2.5 x 10¹³ holes. These charge carriers are produced by thermal excitation. In intrinsic semiconductors the number of excited electrons and the number of holes are equal: n = p. Electrons and holes are created by excitation of electron from valence band to the conduction band. An electron hole (often simply called a hole) is the lack of an electron at a position where one could exist in an atom or atomic lattice. This equality may even be the case after doping the semiconductor, though only if it is doped with both donors and acceptors equally. In this case, n = p still holds, and the semiconductor remains intrinsic, though doped. The addition of 0.001% of arsenic (an impurity) donates an extra 10¹⁷ free electrons in the same volume and the electrical conductivity is increased by a factor of 10,000. In doped material the signal to noise ratio (S/N) would be even smaller. Because germanium has relatively low band gap, these detectors must be cooled in order to reduce the thermal generation of charge carriers (thus reverse leakage current) to an acceptable level. Otherwise, leakage current induced noise destroys the energy resolution of the detector.

Charge Carriers in n-type Semiconductors

In the n-type semiconductor, the conduction electrons are completely dominated by the number of donor electrons. Therefore:

The total number of conduction electrons is approximately equal to the number of donor sites, n≈N_D.

Charge neutrality of semiconductor material is maintained because excited donor sites balance the conduction electrons. The net result is that the number of conduction electrons is increased, while the number of holes is reduced. The imbalance of the carrier concentration in the respective bands is expressed by the different absolute number of electrons and holes. Electrons are majority carriers, while holes are minority carriers in n-type material.

Charge Carriers in p-type Semiconductors

In the p-type semiconductor, the number of electron holes are completely dominated by the number of acceptor sites. Therefore:

The total number of holes is approximately equal to the number of donor sites, p ≈ N_A.

Charge neutrality of this semiconductor material is also maintained. The net result is that the number of electron holes is increased, while the number of conduction electrons is reduced. The imbalance of the carrier concentration in the respective bands is expressed by the different absolute number of electrons and holes. Electron holes are majority carriers, while electrons are minority carriers in p-type material.

See also:

Types of Semiconductors

In general, semiconductors are materials, inorganic or organic, which have the ability to control their conduction depending on chemical structure, temperature, illumination, and presence of dopants. The name semiconductor comes from the fact that these materials  have an electrical conductivity between that of a metal, like copper, gold, etc. and an insulator, such as glass. They have an energy gap less than 4eV (about 1eV). In solid-state physics, this energy gap or band gap is an energy range between valence band and conduction band where electron states are forbidden. In contrast to conductors, electrons in a semiconductor must obtain energy (e.g. from ionizing radiation) to cross the band gap and to reach the conduction band. Properties of semiconductors are determined by the energy gap between valence and conduction bands.

The P-N Junction – Reverse Biased Junction

The semiconductor detector operates much better as a radiation detector if an external voltage is applied across the junction in the reverse biased direction. The depletion region will function as a radiation detector. Improvement can be reached by use of a reverse-bias voltage to the P-N junction to deplete the detector of free carriers, which is the principle of the most semiconductor detectors. Reverse biasing a junction increases the thickness of the depletion region because the potential difference across the junction is enhanced. Germanium detectors have a p-i-n structure in which the intrinsic (i) region is sensitive to ionizing radiation, particularly X rays and gamma rays. Under reverse bias, an electric field extends across the intrinsic or depleted region. In this case, negative voltage is applied to the p-side and positive to the second one. Holes in the p-region are attracted from the junction towards the p contact and similarly for electrons and the n contact. This charge, which is in proportion to the energy deposited in the detector by the incoming photon, is converted into a voltage pulse by an integral charge sensitive preamplifier.

See also: Germanium Detectors, MIRION Technologies. <available from: https://www.mirion.com/products/germanium-detectors>.

See also:

Types of Semiconductors

In physics of semiconductors, a donor is a dopant atom (impurity) that, when added to a semiconductor, can form a n-type semiconductor. The process of adding controlled impurities to a semiconductor is known as semiconductor doping. This process changes an intrinsic semiconductor to an extrinsic semiconductor. For both types of donor or acceptor atoms, increasing dopant density increases conductivity.

n-type Semiconductors

An extrinsic semiconductor which has been doped with electron donor atoms is called an n-type semiconductor, because the majority of charge carriers in the crystal are negative electrons. Since silicon is a tetravalent element, the normal crystal structure contains 4 covalent bonds from four valence electrons. In silicon, the most common dopants are group III and group V elements. Group V elements (pentavalent) have five valence electrons, which allows them to act as a donor. That means, the addition of these pentavalent impurities such as arsenic, antimony or phosphorus contributes free electrons, greatly increasing the conductivity of the intrinsic semiconductor. For example, a silicon crystal doped with boron (group III) creates a p-type semiconductor whereas a crystal doped with phosphorus (group V) results in an n-type semiconductor.

The conduction electrons are completely dominated by the number of donor electrons. Therefore:

The total number of conduction electrons is approximately equal to the number of donor sites, n≈N_D.

Charge neutrality of semiconductor material is maintained because excited donor sites balance the conduction electrons. The net result is that the number of conduction electrons is increased, while the number of holes is reduced. The imbalance of the carrier concentration in the respective bands is expressed by the different absolute number of electrons and holes. Electrons are majority carriers, while holes are minority carriers in n-type material.

Donor Level

From the energy gap viewpoint, such impurities “create” energy levels in the band gap close to conduction band so that electrons can be easily excited from these levels into the conduction band. The electrons are said to be the “majority carriers” for current flow in an n-type semiconductor. This shifts the effective Fermi level to a point about halfway between the donor levels and the conduction band. Fermi level is the term used to describe the top of the collection of electron energy levels at absolute zero temperature. The Fermi level is the surface of Fermi sea at absolute zero where no electrons will have enough energy to rise above the surface. In pure semiconductors the position of the Fermi level is within the band gap, approximately in the middle of the band gap.

See also:

Types of Semiconductors

In physics of semiconductors, an acceptor is a dopant atom (impurity) that, when added to a semiconductor, can form a p-type semiconductor. The process of adding controlled impurities to a semiconductor is known as semiconductor doping. This process changes an intrinsic semiconductor to an extrinsic semiconductor. For both types of donor or acceptor atoms, increasing dopant density increases conductivity.

p-type Semiconductors

An extrinsic semiconductor which has been doped with electron acceptor atoms is called a p-type semiconductor, because the majority of charge carriers in the crystal are electron holes (positive charge carriers). The pure semiconductor silicon is a tetravalent element, the normal crystal structure contains 4 covalent bonds from four valence electrons. In silicon, the most common dopants are group III and group V elements. Group III elements (trivalent) all contain three valence electrons, causing them to function as acceptors when used to dope silicon. When an acceptor atom replaces a tetravalent silicon atom in the crystal, a vacant state (an electron hole) is created. An electron hole (often simply called a hole) is the lack of an electron at a position where one could exist in an atom or atomic lattice. It is one of the two types of charge carriers that are responsible for creating electric current in semiconducting materials. These positively charged holes can move from atom to atom in semiconducting materials as electrons leave their positions. The addition of trivalent impurities such as boron, aluminum or gallium to an intrinsic semiconductor creates these positive electron holes in the structure. For example, a silicon crystal doped with boron (group III) creates a p-type semiconductor whereas a crystal doped with phosphorus (group V) results in an n-type semiconductor.

The number of electron holes are completely dominated by the number of acceptor sites. Therefore:

The total number of holes is approximately equal to the number of donor sites, p ≈ N_A.

Charge neutrality of this semiconductor material is also maintained. The net result is that the number of electron holes is increased, while the number of conduction electrons is reduced. The imbalance of the carrier concentration in the respective bands is expressed by the different absolute number of electrons and holes. Electron holes are majority carriers, while electrons are minority carriers in p-type material.

Acceptor Level

From the energy gap viewpoint, such impurities “create” energy levels within the band gap close to the valence band so that electrons can be easily excited from the valence band into these levels, leaving mobile holes in the valence band. They create “shallow” levels, levels that are very close to the valence band, so the energy required to ionize the atom (accept the electron that fills the hole and creates another hole further from the substituted atom) is small. This shifts the effective Fermi level to a point about halfway between the acceptor levels and the valence band. Fermi level is the term used to describe the top of the collection of electron energy levels at absolute zero temperature. The Fermi level is the surface of Fermi sea at absolute zero where no electrons will have enough energy to rise above the surface. In pure semiconductors the position of the Fermi level is within the band gap, approximately in the middle of the band gap.

See also:

Types of Semiconductors

In physics of semiconductors, an electron donor is a dopant atom (impurity) that, when added to a semiconductor, can form a n-type semiconductor. An electron acceptor is a dopant atom (impurity) that, when added to a semiconductor, can form a p-type semiconductor. The process of adding controlled impurities to a semiconductor is known as semiconductor doping. This process changes an intrinsic semiconductor to an extrinsic semiconductor. For both types of donor or acceptor atoms, increasing dopant density increases conductivity.

n-type Semiconductors

An extrinsic semiconductor which has been doped with electron donor atoms is called an n-type semiconductor, because the majority of charge carriers in the crystal are negative electrons. Since silicon is a tetravalent element, the normal crystal structure contains 4 covalent bonds from four valence electrons. In silicon, the most common dopants are group III and group V elements. Group V elements (pentavalent) have five valence electrons, which allows them to act as a donor. That means, the addition of these pentavalent impurities such as arsenic, antimony or phosphorus contributes free electrons, greatly increasing the conductivity of the intrinsic semiconductor. For example, a silicon crystal doped with boron (group III) creates a p-type semiconductor whereas a crystal doped with phosphorus (group V) results in an n-type semiconductor.

The conduction electrons are completely dominated by the number of donor electrons. Therefore:

The total number of conduction electrons is approximately equal to the number of donor sites, n≈N_D.

Charge neutrality of semiconductor material is maintained because excited donor sites balance the conduction electrons. The net result is that the number of conduction electrons is increased, while the number of holes is reduced. The imbalance of the carrier concentration in the respective bands is expressed by the different absolute number of electrons and holes. Electrons are majority carriers, while holes are minority carriers in n-type material.

p-type Semiconductors

An extrinsic semiconductor which has been doped with electron acceptor atoms is called a p-type semiconductor, because the majority of charge carriers in the crystal are electron holes (positive charge carriers). The pure semiconductor silicon is a tetravalent element, the normal crystal structure contains 4 covalent bonds from four valence electrons. In silicon, the most common dopants are group III and group V elements. Group III elements (trivalent) all contain three valence electrons, causing them to function as acceptors when used to dope silicon. When an acceptor atom replaces a tetravalent silicon atom in the crystal, a vacant state (an electron hole) is created. An electron hole (often simply called a hole) is the lack of an electron at a position where one could exist in an atom or atomic lattice. It is one of the two types of charge carriers that are responsible for creating electric current in semiconducting materials. These positively charged holes can move from atom to atom in semiconducting materials as electrons leave their positions. The addition of trivalent impurities such as boron, aluminum or gallium to an intrinsic semiconductor creates these positive electron holes in the structure. For example, a silicon crystal doped with boron (group III) creates a p-type semiconductor whereas a crystal doped with phosphorus (group V) results in an n-type semiconductor.

The number of electron holes are completely dominated by the number of acceptor sites. Therefore:

The total number of holes is approximately equal to the number of donor sites, p ≈ N_A.

Charge neutrality of this semiconductor material is also maintained. The net result is that the number of electron holes is increased, while the number of conduction electrons is reduced. The imbalance of the carrier concentration in the respective bands is expressed by the different absolute number of electrons and holes. Electron holes are majority carriers, while electrons are minority carriers in p-type material.

See also:

Types of Semiconductors

A scintillation detector or scintillation counter is obtained when a scintillator is coupled to an electronic light sensor such as:

• a photomultiplier tube (PMT),
• a charge-coupled device (CCD) camera,
• photodiode

All these devices may be used in scintillation counters and all convert the light to an electrical signal and contain electronics to process this signal. A photodiode is a semiconductor device that converts light into an electrical current. This is a semiconductor device which consists of a thin layer of silicon in which the light is absorbed after which free charge carriers (electrons and holes) are created. A conventional photodiode most often refers to a PIN diode. PIN means that the p and the n doped sides are separated by a depleted i-region. Electrons and holes are collected at the anode and cathode of the diode. This results in a photocurrent that is the output of the diode. The charge is however not amplified making the output signal amplitude small. This makes the photodiode sensitive to electronic noise. On the other hand, the quantum efficiency for the photodiode is high (60-80%) compared to the PMT (20-30%) which gives a higher energy resolution.

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See also:

Scintillation Counters

A semiconductor detector is a radiation detector which is based on a semiconductor, such as silicon or germanium to measure the effect of incident charged particles or photons. In general, semiconductors are materials, inorganic or organic, which have the ability to control their conduction depending on chemical structure, temperature, illumination, and presence of dopants. The name semiconductor comes from the fact that these materials  have an electrical conductivity between that of a metal, like copper, gold, etc. and an insulator, such as glass. They have an energy gap less than 4eV (about 1eV). In solid-state physics, this energy gap or band gap is an energy range between valence band and conduction band where electron states are forbidden. In contrast to conductors, electrons in a semiconductor must obtain energy (e.g. from ionizing radiation) to cross the band gap and to reach the conduction band.

Semiconductor detectors are very similar in operation as photovoltaic panels that generate electric current. In a similar way a current can be induced by ionizing radiation.  As ionizing radiation enters the semiconductor, it interacts with the semiconductor material. It may excite an electron out of its energy level and consequently leave a hole. This process is known as electron–hole pair generation. In semiconductor detectors, the fundamental information carriers are these electron-hole pairs, which are produced along the path taken by the charged particle (primary or secondary) through the detector. By collecting electron-hole pairs, the detection signal is formed and recorded.

Semiconductor detectors are widely used in radiation protection, assay of radioactive materials and physics research because they have some unique features, can be made inexpensively yet with good efficiency, and can measure both the intensity and the energy of incident radiation. These detectors are employed to measure the energy of the radiation and for identification of particles. Of the available semiconductor materials, silicon is mainly used for charged particle detectors (especially for tracking charged particles) and soft X-ray detectors while germanium is widely used for gamma ray spectroscopy. A large, clean and almost perfect semiconductor is ideal as a counter for radioactivity. However, it is difficult to make large crystals with sufficient purity. The semiconductor detectors have, therefore, low efficiency, but they do give a very precise measure of the energy. Semiconductor detectors, especially germanium based detectors, are most commonly used where a very good energy resolution is required. In order to achieve maximum efficiency the detectors must operate at the very low temperatures of liquid nitrogen (-196°C). Therefore, the drawback is that semiconductor detectors are much more expensive than other detectors and require sophisticated cooling to reduce leakage currents (noise).

Principle of Operation of Semiconductor Detectors  

The operation of semiconductor detectors is  summarized in the following points:

• Ionizing radiation enters the sensitive volume of the detector and interacts with the semiconductor material.
• Particle passing through the detector ionizes the atoms of semiconductor, producing the electron-hole pairs. The number of electron-hole pairs is proportional to the energy of the radiation to the semiconductor. As a result, a number of electrons are transferred from the valence band to the conduction band, and an equal number of holes are created in the valence band.
• Under the influence of an electric field, electrons and holes travel to the electrodes, where they result in a pulse that can be measured in an outer circuit,
• This pulse carries information about the energy of the original incident radiation. The number of such pulses per unit time also gives information about the intensity of the radiation.

The energy required to produce electron-hole-pairs is very low compared to the energy required to produce paired ions in a gaseous ionization detector. In semiconductor detectors the statistical variation of the pulse height is smaller and the energy resolution is higher. As the electrons travel fast, the time resolution is also very good. Compared with gaseous ionization detectors, the density of a semiconductor detector is very high, and charged particles of high energy can give off their energy in a semiconductor of relatively small dimensions.

Silicon-based Semiconductor Detectors

Silicon-based semiconductor detectors are mainly used for charged particle detectors (especially for tracking charged particles) and soft X-ray detectors while germanium is widely used for gamma ray spectroscopy. A large, clean and almost perfect semiconductor is ideal as a counter for radioactivity. However, it is difficult to make large crystals with sufficient purity. The semiconductor detectors have, therefore, low efficiency, but they do give a very precise measure of the energy. Detectors based on silicon have sufficiently low noise even by room temperature. This is caused by the large band gap of silicon (Egap= 1.12 eV), which allows us to operate the detector at room temperature, but cooling is prefered to reduce noise. The drawback is that silicon detectors are much more expensive than cloud chambers or wire chambers and require sophisticated cooling to reduce leakage currents (noise). They also suffer degradation over time from radiation, however this can be greatly reduced thanks to the Lazarus effect.

Application of Silicon Detectors

Since silicon-based detectors are very good for tracking charged particles, they constitute a substantial part of detection system at the LHC in CERN. Most silicon particle detectors work, in principle, by doping narrow (usually around 100 micrometers wide) strips of silicon to turn them into diodes, which are then reverse biased. As charged particles pass through these strips, they cause small ionization currents that can be detected and measured. Arranging thousands of these detectors around a collision point in a particle accelerator can yield an accurate picture of what paths particles take. For example, the Inner Tracking System (ITS) of a Large Ion Collider Experiment (ALICE) contains three layers of silicon-based detectors:

• Silicon Pixel Detector (SPD)
• Silicon Drift Detector (SDD)
• Silicon Strip Detector (SSD)

Silicon Strip Detectors

Silicon-based detectors are very good for tracking charged particles. A silicon strip detector is an arrangement of strip like shaped implants acting as charge collecting electrodes.

Silicon strip detectors 5 x 5 cm² in area are quite common and are used in series (just like planes of MWPCs) to determine charged-particle trajectories to position-accuracies of the order of several μm in the transverse direction.  Placed on a low doped fully depleted silicon wafer these implants form a one-dimensional array of diodes. By connecting each of the metalized strips to a charge sensitive amplifier a position sensitive detector is built. Two dimensional position measurements can be achieved by applying an additional strip like doping on the wafer backside by use of a double sided technology.  Such devices can be used to measure small impact parameters and thereby determine whether some charged particle originated from a primary collision or was the decay product of a primary particle that traveled a small distance from the original interaction, and then decayed.

Silicon strip detectors constitute a substantial part of detection system at the LHC in CERN. Most silicon particle detectors work, in principle, by doping narrow (usually around 100 micrometers wide) strips of silicon to turn them into diodes, which are then reverse biased. As charged particles pass through these strips, they cause small ionization currents that can be detected and measured. Arranging thousands of these detectors around a collision point in a particle accelerator can yield an accurate picture of what paths particles take.

For example, the Inner Tracking System (ITS) of a Large Ion Collider Experiment (ALICE) contains three layers of silicon-based detectors:

• Silicon Pixel Detector (SPD)
• Silicon Drift Detector (SDD)
• Silicon Strip Detector (SSD)

Delta E – E Detector – Telescope

In experimental physics, ΔE-E detectors, known as telescopes, are powerful devices for charged particles identification. In order to provide charged-particle identification, telescopes consisting of pairs of thin and thick surface-barrier detectors can be used. These detectors must be positioned in series. The velocity is deduced from the stopping power measured in the thin detectors (ΔE detectors). There is a strong correlation between the energy deposited in each detector. This correlation depends on the mass (A), the charge (Z) and the kinetic energy (E) of each particle. The mass is deduced from the range or from the total kinetic energy loss in the thicker detector (E detector).

Telescopes can be  composed of several detectors (ionization chambers, silicon detectors and scintillators for instance) stacked in order to slow down incident charged particles, the first detector being the thinnest and the last one the thickest. CsI scintillation counters can be, for example used as final E counters. As an example of telescope, an assembly based on two front ΔE silicon detectors (10 or 30 µm) and an E silicon counter 1500 µm thick may be used for detection of high-energy charged particles.

Germanium-based Semiconductor Detectors

Germanium-based semiconductor detectors are most commonly used where a very good energy resolution is required, especially for gamma spectroscopy, as well as x-ray spectroscopy. In gamma spectroscopy, germanium is preferred due to its atomic number being much higher than silicon and which increases the probability of gamma ray interaction. Moreover, germanium has lower average energy necessary to create an electron-hole pair, which is 3.6 eV for silicon and 2.9 eV for germanium. This also provides the latter a better resolution in energy. A large, clean and almost perfect germanium semiconductor is ideal as a counter for radioactivity. However, it is difficult and expensive to make large crystals with sufficient purity. While silicon-based detectors cannot be thicker than a few millimeters, germanium can have a depleted, sensitive thickness of centimeters, and therefore can be used as a total absorption detector for gamma rays up to few MeV.

On the other hand, in order to achieve maximum efficiency the detectors must operate at the very low temperatures of liquid nitrogen (-196°C), because at room temperatures the noise caused by thermal excitation is very high.

Since germanium detectors produce the highest resolution commonly available today, they are used to measure radiation in a variety of applications including personnel and environmental monitoring for radioactive contamination, medical applications, radiometric assay, nuclear security and nuclear plant safety.

Application of Germanium Detectors – Gamma Spectroscopy

As was written, the study and analysis of gamma ray spectra for scientific and technical use is called gamma spectroscopy, and gamma ray spectrometers are the instruments which observe and collect such data. A gamma ray spectrometer (GRS) is a sophisticated device for measuring the energy distribution of gamma radiation. For the measurement of gamma rays above several hundred keV, there are two detector categories of major importance, inorganic scintillators as NaI(Tl) and semiconductor detectors. In the previous articles, we described the gamma spectroscopy using scintillation detector, which consists of a suitable scintillator crystal, a photomultiplier tube, and a circuit for measuring the height of the pulses produced by the photomultiplier. The advantages of a scintillation counter are its efficiency (large size and high density) and the high precision and counting rates that are possible. Due to the high atomic number of iodine, a large number of all interactions will result in complete absorption of gamma-ray energy, so the photo fraction will be high.

But if a perfect energy resolution is required, we have to use germanium-based detector, such as the HPGe detector. Germanium-based semiconductor detectors are most commonly used where a very good energy resolution is required, especially for gamma spectroscopy, as well as x-ray spectroscopy. In gamma spectroscopy, germanium is preferred due to its atomic number being much higher than silicon and which increases the probability of gamma ray interaction. Moreover, germanium has lower average energy necessary to create an electron-hole pair, which is 3.6 eV for silicon and 2.9 eV for germanium. This also provides the latter a better resolution in energy. The FWHM (full width at half maximum) for germanium detectors is a function of energy. For a 1.3 MeV photon, the FWHM is 2.1 keV, which is very low.

See also:

Detection